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| Transistor 2SB976 Silicon PNP epitaxial planer type For low-frequency output amplification For DC-DC converter For stroboscope Unit: mm 5.00.2 4.00.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -27 -18 -7 -8 -5 0.75 150 -55 ~ +150 Unit V V 123 0.45 -0.1 1.27 +0.2 13.50.5 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 5.10.2 0.45 -0.1 1.27 +0.2 2.30.2 V A A W C C 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO IEBO VCEO VEBO hFE fT Cob *1 Conditions VCB = -10V, IE = 0 VEB = -5V, IC = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -2A*2 IC = -3A, IB = -0.1A*2 VCB = -6V, IE = 50mA, f = 200MHz VCB = -20V, IE = 0, f = 1MHz min typ max -100 -1 Unit nA A V V -18 -7 125 - 0.4 120 60 *2 625 -1 V MHz pF Pulse measurement VCE(sat) *1h FE Rank classification Q 125 ~ 205 R 180 ~ 625 Rank hFE 1 Transistor PC -- Ta 1.0 -6 Ta=25C IB=-40mA -5 -35mA -30mA -25mA -4 -20mA -15mA -10mA -2 -5mA -1 -1mA 0 0 20 40 60 80 100 120 140 160 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -10 2SB976 IC -- VCE -12 VCE=-2V IC --VBE Collector power dissipation PC (W) 0.9 Collector current IC (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Collector current IC (A) 0.8 -8 Ta=75C -6 25C -3 -25C -4 -2 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C -25C IC/IB=30 1000 900 hFE -- IC 240 VCE=-2V fT -- I E VCB=-6V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -1 -3 -10 800 700 600 500 Ta=75C 400 300 200 100 0 - 0.01 - 0.03 - 0.1 - 0.3 25C -25C 200 160 120 - 0.3 - 0.1 - 0.03 80 40 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 0 1 3 10 30 100 -10 -30 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 200 Collector output capacitance Cob (pF) 180 160 140 120 100 80 60 40 20 0 -1 IE=0 f=1MHz Ta=25C -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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